Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/396
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dc.contributorDepartment of Applied Physics-
dc.contributorMaterials Research Centre-
dc.creatorZheng, RK-
dc.creatorWang, Y-
dc.creatorChan, HLW-
dc.creatorChoy, CL-
dc.creatorLuo, H-
dc.date.accessioned2014-12-11T08:27:32Z-
dc.date.available2014-12-11T08:27:32Z-
dc.identifier.issn0003-6951-
dc.identifier.urihttp://hdl.handle.net/10397/396-
dc.language.isoenen_US
dc.publisherAmerican Institute of Physicsen_US
dc.rights© 2008 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in R.K. Zheng et al. Appl. Phys. Lett. 92, 082908 (2008) and may be found at http://link.aip.org/link/?apl/92/082908en_US
dc.subjectBarium compoundsen_US
dc.subjectDielectric polarisationen_US
dc.subjectLanthanum compoundsen_US
dc.subjectPiezoelectricityen_US
dc.subjectStress effectsen_US
dc.subjectThin filmsen_US
dc.subjectX-ray diffractionen_US
dc.titleSubstrate-induced strain effect in La[sub 0.875]Ba[sub 0.125]MnO₃ thin films grown on ferroelectric single-crystal substratesen_US
dc.typeJournal/Magazine Articleen_US
dc.identifier.spage1-
dc.identifier.epage3-
dc.identifier.volume92-
dcterms.abstractThe authors have studied the substrate-induced strain effect in La[sub 0.875]Ba[sub 0.125]MnO₃ (LBMO) thin films grown on ferroelectric 0.67Pb(Mg[sub ⅓]Nb[sub ⅔]) O₃-0.33PbTiO₃ (PMN-PT) single-crystal substrates. Both the strain and resistance of the films can be in situ varied by applying an electric field across the PMN-PT substrates. X-ray diffraction analysis indicates that the variations of strain and resistance result from the induced strain in the PMN-PT substrate due to the ferroelectric polarization or the converse piezoelectric effect. The relationships between the resistance and the induced strain in the LBMO film and PMN-PT substrate have been quantitatively analyzed.-
dcterms.accessRightsopen accessen_US
dcterms.bibliographicCitationApplied physics letters, 28 Feb. 2008, v. 92, 082908, p. 1-3-
dcterms.isPartOfApplied physics letters-
dcterms.issued2008-02-28-
dc.identifier.isiWOS:000254297300070-
dc.identifier.scopus2-s2.0-40049086387-
dc.identifier.eissn1077-3118-
dc.identifier.rosgroupidr39668-
dc.description.ros2007-2008 > Academic research: refereed > Publication in refereed journal-
dc.description.oaVersion of Recorden_US
dc.identifier.FolderNumberOA_IR/PIRAen_US
dc.description.pubStatusPublisheden_US
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