Please use this identifier to cite or link to this item:
http://hdl.handle.net/10397/390
DC Field | Value | Language |
---|---|---|
dc.contributor | Department of Applied Physics | - |
dc.contributor | Materials Research Centre | - |
dc.creator | Ke, S | - |
dc.creator | Huang, H | - |
dc.creator | Wang, T | - |
dc.creator | Fan, H | - |
dc.creator | Jie, W | - |
dc.creator | Chan, HLW | - |
dc.date.accessioned | 2014-12-11T08:27:31Z | - |
dc.date.available | 2014-12-11T08:27:31Z | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.uri | http://hdl.handle.net/10397/390 | - |
dc.language.iso | en | en_US |
dc.publisher | American Institute of Physics | en_US |
dc.rights | © 2007 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in S. Ke et al. Appl. Phys. Lett. 91, 162901 (2007) and may be found at http://link.aip.org/link/?apl/91/162901 | en_US |
dc.subject | Cadmium compounds | en_US |
dc.subject | Dielectric polarisation | en_US |
dc.subject | Dielectric relaxation | en_US |
dc.subject | Dielectric resonance | en_US |
dc.subject | Ferroelectric semiconductors | en_US |
dc.subject | II-VI semiconductors | en_US |
dc.subject | Piezoelectricity | en_US |
dc.subject | Zinc compounds | en_US |
dc.title | Slow relaxation of piezoelectric response in CdZnTe ferroelectric semiconductor single crystals | en_US |
dc.type | Journal/Magazine Article | en_US |
dc.identifier.spage | 1 | - |
dc.identifier.epage | 3 | - |
dc.identifier.volume | 91 | - |
dcterms.abstract | The piezoelectric response in Cd[sub 0.9]Zn[sub 0.1]Te (CZT) semiconductor single crystals has been investigated by analyzing room temperature impedance spectra. The polarization is significantly influenced by light illumination. A slow relaxation process of the piezoelectric response has been observed with a relaxation time of 37 s, which is comparable to the discharge current results. The frequencies for piezoelectric resonance and antiresonance can be tuned to lower values when a bias field is applied and can be recovered when the bias field is removed. These phenomena may be universal for ferroelectric semiconductors and can be explained by a slow relaxation model in dielectrics. | - |
dcterms.accessRights | open access | en_US |
dcterms.bibliographicCitation | Applied physics letters, 15 Oct. 2007, v. 91, 162901, p. 1-3 | - |
dcterms.isPartOf | Applied physics letters | - |
dcterms.issued | 2007-10-15 | - |
dc.identifier.isi | WOS:000250295700057 | - |
dc.identifier.scopus | 2-s2.0-35548965107 | - |
dc.identifier.eissn | 1077-3118 | - |
dc.identifier.rosgroupid | r38789 | - |
dc.description.ros | 2007-2008 > Academic research: refereed > Publication in refereed journal | - |
dc.description.oa | Version of Record | en_US |
dc.identifier.FolderNumber | OA_IR/PIRA | en_US |
dc.description.pubStatus | Published | en_US |
Appears in Collections: | Journal/Magazine Article |
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File | Description | Size | Format | |
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semiconductor_07.pdf | 83.27 kB | Adobe PDF | View/Open |
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