Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/38887
Title: Two-step interfacial reaction of HfO2 high-k gate dielectric thin films on Si
Authors: Dai, JY 
Lee, PF
Chan, HLW 
Choy, CL 
Issue Date: 2003
Source: International Conference on Materials for Advanced Technologies (ICMAT 2003) and International Conference in Asia 2003 (IUMRS ICA 2003), Singapore, 7-12 December 2003, p. 206 How to cite?
URI: http://hdl.handle.net/10397/38887
Appears in Collections:Conference Paper

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