Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/38521
Title: Growth and characterization of copper indium disulfide nanorods using anodized aluminum as the growth mask
Authors: Lam, H
Zhang, ZW
Chan, CP
Chen, Z
Surya, C 
Zhu, CF
Keywords: CuInS2
Electrodeposition
Nanoparticle
Issue Date: 2009
Source: Proceedings of the 24th European Photovoltaic Solar Energy Conference and Exhibition (EU PVSEC'2009), 21-25 September 2009, Hamburg, Germany, p. 395-397 How to cite?
Abstract: We report on the growth and characterization of copper indium disulfide (CIS) nanorods by electrodeposition using anodized aluminum oxide (AAO) as the growth mask. The technique facilitates effective control of both the stoichiometry and the diameters of the nanorods. The AAO nano-mask was prepared using a two-step anodization process. The pore size in the anodized aluminum foil can be controlled by varying the anodization potential. Anhydrous salts of CuCl2 and InCl3 were dissolved in an aqeous solution during the electrodeposition process. Using this technique we have successfully grown CIS nanorods with diameters varying between 50 nm to 300 nm. The lengths of the nanorods were between 5 μm to 20 μm. The stoichiometry of the nanorods can be effectively controlled by varying the electrodeposition potential. The nanorods were separated from the substrates by ultrasound and were subsequently placed on a glass plate. Metallic interdigitated structures were fabricated using standard photolithographic technique to facilitate electrical contacts with the nanorods. Detailed characterizations of the structural and the optoelectronic properties of the nanorods were performed by X-ray diffraction, transmission electron microscopy and I-V measurements on the materials.
URI: http://hdl.handle.net/10397/38521
ISBN: 3-936338-25-6
DOI: 10.4229/24thEUPVSEC2009-1CV.3.67
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