Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/37850
Title: Fabrication and characterization of Ni/GaN Schottky junction erythemal UV detectors
Authors: Lui, HF
Fong, WK
Surya, C 
Keywords: III-V semiconductors
Schottky barriers
Coating techniques
Gallium compounds
Nickel
Photodetectors
Ultraviolet detectors
Wide band gap semiconductors
Issue Date: 2009
Source: The 14th OptoElectronics and Communications Conference (OECC 2009), Hong Kong, China, 13-17 July 2009, p. 1-2 How to cite?
Abstract: We report the novel design of an erythemal UV photodetector consisting of two Ni/GaN Schottky junctions in anti-parallel configuration. A polymer film was deposited on top of one of the junctions. This configuration enables cancellation of photocurrent for wavelengths above 300 nm.
URI: http://hdl.handle.net/10397/37850
ISBN: 978-1-4244-4102-0
978-1-4244-4103-7 (E-ISBN)
DOI: 10.1109/OECC.2009.5218127
Appears in Collections:Conference Paper

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