Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/37847
Title: Characterizations of InGaN/GaN MQWs with different growth parameters
Authors: Leung, KK
Fong, WK
Surya, C 
Keywords: III-V semiconductors
MOCVD
Gallium compounds
Indium compounds
Light emitting diodes
Semiconductor device noise
Semiconductor growth
Semiconductor quantum wells
Stress effects
Wide band gap semiconductors
Issue Date: 2009
Source: The 14th OptoElectronics and Communications Conference (OECC 2009), Hong Kong, China, 13-17 July 2009, p. 1-2 How to cite?
Abstract: We investigated the effects of the growth parameters on the microstructural, optoelectronic and low-frequency noise properties of InGaN/GaN multiple quantum well (MQW). Dc current stress was applied to the devices and their degradations were investigated as a function of the stress time.
URI: http://hdl.handle.net/10397/37847
ISBN: 978-1-4244-4102-0
978-1-4244-4103-7 (E-ISBN)
DOI: 10.1109/OECC.2009.5220553
Appears in Collections:Conference Paper

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