Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/37702
Title: Improved thermal stability of GaAs/A1GaAs single quantum well by Zn out diffusion for Zn doped GaAs substrate
Authors: Zhao, F
Choi, IW
Hing, P
Shu, Y
Ong, TK
Ooi, BS
Jiang, J
Chan, MCY
Surya, C 
Li, EH
Keywords: III-V semiconductors
Aluminium compounds
Chemical interdiffusion
Gallium arsenide
Photoluminescence
Rapid thermal annealing
Semiconductor doping
Semiconductor quantum wells
Thermal stability
Zinc
Issue Date: 2000
Source: LEOS 2000 : 2000 IEEE Annual Meeting : conference proceedings : 13th Annual Meeting : IEEE Lasers and Electro-Optics Society : 2000 Annual Meeting : 13-16 November, 2000, the Westin Rio Mar Beach, Rio Grande, Puerto Rico, p. 710-711 How to cite?
URI: http://hdl.handle.net/10397/37702
ISBN: 0-7803-5947-X
DOI: 10.1109/LEOS.2000.894051
Appears in Collections:Conference Paper

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