Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/37698
Title: Magnetism as a probe of the origin of memristive switching in oxide semiconductors
Authors: Wang, XL
Shao, Q
Ku, PS
Leung, CW 
Ruotolo, A
Issue Date: 2014
Source: IEEE International Magnetics Conference (INTERMAG 2014), Dresden, Germany, 4-8 May 2014, p. 1-2 How to cite?
URI: http://hdl.handle.net/10397/37698
Appears in Collections:Conference Paper

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