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Title: Giant electric energy density in epitaxial lead-free thin films with coexistence of ferroelectrics and antiferroelectrics
Authors: Peng, BL
Zhang, Q
Li, X
Sun, TY
Fan, HQ
Ke, SM
Ye, M
Wang, Y 
Lu, W
Niu, HB
Scott, JF
Zeng, XR
Huang, HT 
Issue Date: 2015
Publisher: John Wiley & Sons
Source: Advanced electronic materials, 2015, v. 1, no. 5, 1500052 How to cite?
Journal: Advanced electronic materials 
Abstract: Ferroelectrics/antiferroelectrics with high dielectric breakdown strength have the potential to store a great amount of electrical energy, attractive for many modern applications in electronic devices and systems. Here, it is demonstrated that a giant electric energy density (154 J cm(-3), three times the highest value of lead-based systems and five times the value of the best dielectric/ferroelectric polymer), together with the excellent fatigue-free property, good thermal stability, and high efficiency, is realized in pulsed laser deposited (Bi1/2Na1/2)(0.9118)La0.02Ba0.0582(Ti0.97Zr0.03)O-3 (BNLBTZ) epitaxial lead-free relaxor thin films with the coexistence of ferroelectric (FE) and antiferroelectric (AFE) phases. This is endowed by high epitaxial quality, great relaxor dispersion, and the coexistence of the FE/AFE phases near the morphotropic phase boundary. The giant energy storage effect of the BNLBTZ lead-free relaxor thin films may make a great impact on the modern energy storage technology.
ISSN: 2199-160X (online)
DOI: 10.1002/aelm.201500052
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