Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/36297
Title: Growth of highly textured SnS on mica using an SnSe buffer layer
Authors: Wang, SF
Fong, WK
Wang, W
Surya, C 
Keywords: Tin sulfide
Van der Waals epitaxy
Nucleation
Mica
Tin selenide
Buffer layer
Low-frequency noise
Issue Date: 2014
Publisher: Elsevier
Source: Thin solid films, 2014, v. 564, p. 206-212 How to cite?
Journal: Thin solid films 
Abstract: We report the growth of SnS thin films on mica substrates by molecular beam epitaxy. Excellent 2D layered structure and strong (001) texture were observed with a record low rocking curve full width at half maximum of similar to 0.101 degrees for the SnS(004) diffraction. An interface model is used to investigate the nucleation of SnS on mica which indicates the co-existence of six pairs of lateral growth orientations and is in excellent agreement with the experimental Phi-scan measurements indicating 12 peaks separated by 30 degrees from each other. To control the lateral growth of the SnS epilayers we investigate the utilization of a thin SnSe buffer layer deposited on the mica substrate prior to the growth of the SnS thin film. The excellent lattice match between SnSe and mica enhances the alignment of the nucleation of SnS and suppresses the minor lateral orientations along the mica[110] direction and its orthogonal axis. Detailed low-frequency noise measurement was performed to characterize the trap density in the films and our results clearly demonstrate substantial reduction in the density of the localized states in the SnS epilayer with the use of an SnSe buffer layer.
URI: http://hdl.handle.net/10397/36297
ISSN: 0040-6090
DOI: 10.1016/j.tsf.2014.06.010
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