Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/36205
Title: High-mobility pentacene thin-film transistor by using LaxTa(1-x)Oy as gate dielectric
Authors: Han, CY
Tang, WM 
Leung, CH
Che, CM
Lai, PT
Keywords: Organic thin-film transistor
High-kappa dielectric
La incorporation
TaLaO
Oxygen vacancy
Issue Date: 2014
Publisher: North-Holland
Source: Organic electronics : physics, materials, applications, 2014, v. 15, no. 10, p. 2499-2504 How to cite?
Journal: Organic electronics : physics, materials, applications 
Abstract: Pentacene organic thin-film transistors (OTFTs) using LaxTa(1-x)Oy as gate dielectric with different La contents (x = 0.227, 0.562, 0.764, 0.883) have been fabricated and compared with those using Ta oxide or La oxide. The OTFT with La0.764Ta0.236Oy can achieve a carrier mobility of 1.21 cm(2) V(-1)s(-1)s, which is about 40 times and two times higher than those of the devices using Ta oxide and La oxide, respectively. As supported by XPS, AFM and noise measurement, the reasons lie in that La incorporation can suppress the formation of oxygen vacancies in Ta oxide, and Ta content can alleviate the hygroscopicity of La oxide, resulting in more passivated and smoother dielectric surface and thus larger pentacene grains, which lead to higher carrier mobility.
URI: http://hdl.handle.net/10397/36205
ISSN: 1566-1199
DOI: 10.1016/j.orgel.2014.07.016
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