Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/36170
Title: Synthesis of large single-crystal hexagonal boron nitride grains on Cu-Ni alloy
Authors: Lu, GY
Wu, TR
Yuan, QH
Wang, HS
Wang, HM
Ding, F 
Xie, XM
Jiang, MH
Issue Date: 2015
Publisher: Nature Publishing Group
Source: Nature communications, 2015, v. 6, 6160 How to cite?
Journal: Nature communications 
Abstract: Hexagonal boron nitride (h-BN) has attracted significant attention because of its superior properties as well as its potential as an ideal dielectric layer for graphene-based devices. The h-BN films obtained via chemical vapour deposition in earlier reports are always polycrystalline with small grains because of high nucleation density on substrates. Here we report the successful synthesis of large single-crystal h-BN grains on rational designed Cu-Ni alloy foils. It is found that the nucleation density can be greatly reduced to 60 per mm(2) by optimizing Ni ratio in substrates. The strategy enables the growth of single-crystal h-BN grains up to 7,500 mu m(2), approximately two orders larger than that in previous reports. This work not only provides valuable information for understanding h-BN nucleation and growth mechanisms, but also gives an effective alternative to exfoliated h-BN as a high-quality dielectric layer for large-scale nanoelectronic applications.
URI: http://hdl.handle.net/10397/36170
ISSN: 2041-1723
DOI: 10.1038/ncomms7160
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