Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/36165
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dc.contributorDepartment of Applied Physics-
dc.creatorZeng, T-
dc.creatorZhou, Y-
dc.creatorLeung, CW-
dc.creatorLai, PPT-
dc.creatorPong, PWT-
dc.date.accessioned2016-04-15T08:36:37Z-
dc.date.available2016-04-15T08:36:37Z-
dc.identifier.issn1931-7573 (print)en_US
dc.identifier.urihttp://hdl.handle.net/10397/36165-
dc.language.isoenen_US
dc.publisherSpringeren_US
dc.rights© 2014 Zeng et al.; licensee Springer. This is an Open Access article distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/4.0), which permits unrestricted use, distribution, and reproductionin any medium, provided the original work is properly credited.en_US
dc.rightsThe following publication Zeng, T., Zhou, Y., Leung, C. W., Lai, P. P. T., & Pong, P. W. T. (2014). Capacitance effect on the oscillation and switching characteristics of spin torque oscillators. Nanoscale Research Letters, 9, 597, 1-8 is available at https://dx.doi.org/10.1186/1556-276X-9-597en_US
dc.subjectCapacitance effecten_US
dc.subjectOscillation frequencyen_US
dc.subjectCanted regionen_US
dc.subjectSwitching timeen_US
dc.titleCapacitance effect on the oscillation and switching characteristics of spin torque oscillatorsen_US
dc.typeJournal/Magazine Articleen_US
dc.identifier.epage8en_US
dc.identifier.volume9en_US
dc.identifier.doi10.1186/1556-276X-9-597en_US
dcterms.abstractWe have studied the capacitance effect on the oscillation characteristics and the switching characteristics of the spin torque oscillators (STOs). We found that when the external field is applied, the STO oscillation frequency exhibits various dependences on the capacitance for injected current ranging from 8 to 20 mA. The switching characteristic is featured with the emerging of the canted region; the canted region increases with the capacitance. When the external field is absent, the STO free-layer switching time exhibits different dependences on the capacitance for different injected current. These results help to establish the foundation for capacitance-involved STO modeling.-
dcterms.accessRightsopen accessen_US
dcterms.bibliographicCitationNanoscale research letters, 2014, v. 9, 597, p. 1-8-
dcterms.isPartOfNanoscale research letters-
dcterms.issued2014-
dc.identifier.isiWOS:000345092500001-
dc.identifier.scopus2-s2.0-84912003296-
dc.identifier.pmid25404870-
dc.identifier.artn597en_US
dc.identifier.rosgroupid2014000031-
dc.description.ros2014-2015 > Academic research: refereed > Publication in refereed journalen_US
dc.description.oaVersion of Recorden_US
dc.identifier.FolderNumberOA_IR/PIRAen_US
dc.description.pubStatusPublisheden_US
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