Please use this identifier to cite or link to this item:
http://hdl.handle.net/10397/36165
DC Field | Value | Language |
---|---|---|
dc.contributor | Department of Applied Physics | - |
dc.creator | Zeng, T | - |
dc.creator | Zhou, Y | - |
dc.creator | Leung, CW | - |
dc.creator | Lai, PPT | - |
dc.creator | Pong, PWT | - |
dc.date.accessioned | 2016-04-15T08:36:37Z | - |
dc.date.available | 2016-04-15T08:36:37Z | - |
dc.identifier.issn | 1931-7573 (print) | en_US |
dc.identifier.uri | http://hdl.handle.net/10397/36165 | - |
dc.language.iso | en | en_US |
dc.publisher | Springer | en_US |
dc.rights | © 2014 Zeng et al.; licensee Springer. This is an Open Access article distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/4.0), which permits unrestricted use, distribution, and reproductionin any medium, provided the original work is properly credited. | en_US |
dc.rights | The following publication Zeng, T., Zhou, Y., Leung, C. W., Lai, P. P. T., & Pong, P. W. T. (2014). Capacitance effect on the oscillation and switching characteristics of spin torque oscillators. Nanoscale Research Letters, 9, 597, 1-8 is available at https://dx.doi.org/10.1186/1556-276X-9-597 | en_US |
dc.subject | Capacitance effect | en_US |
dc.subject | Oscillation frequency | en_US |
dc.subject | Canted region | en_US |
dc.subject | Switching time | en_US |
dc.title | Capacitance effect on the oscillation and switching characteristics of spin torque oscillators | en_US |
dc.type | Journal/Magazine Article | en_US |
dc.identifier.epage | 8 | en_US |
dc.identifier.volume | 9 | en_US |
dc.identifier.doi | 10.1186/1556-276X-9-597 | en_US |
dcterms.abstract | We have studied the capacitance effect on the oscillation characteristics and the switching characteristics of the spin torque oscillators (STOs). We found that when the external field is applied, the STO oscillation frequency exhibits various dependences on the capacitance for injected current ranging from 8 to 20 mA. The switching characteristic is featured with the emerging of the canted region; the canted region increases with the capacitance. When the external field is absent, the STO free-layer switching time exhibits different dependences on the capacitance for different injected current. These results help to establish the foundation for capacitance-involved STO modeling. | - |
dcterms.accessRights | open access | en_US |
dcterms.bibliographicCitation | Nanoscale research letters, 2014, v. 9, 597, p. 1-8 | - |
dcterms.isPartOf | Nanoscale research letters | - |
dcterms.issued | 2014 | - |
dc.identifier.isi | WOS:000345092500001 | - |
dc.identifier.scopus | 2-s2.0-84912003296 | - |
dc.identifier.pmid | 25404870 | - |
dc.identifier.artn | 597 | en_US |
dc.identifier.rosgroupid | 2014000031 | - |
dc.description.ros | 2014-2015 > Academic research: refereed > Publication in refereed journal | en_US |
dc.description.oa | Version of Record | en_US |
dc.identifier.FolderNumber | OA_IR/PIRA | en_US |
dc.description.pubStatus | Published | en_US |
Appears in Collections: | Journal/Magazine Article |
Files in This Item:
File | Description | Size | Format | |
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Zeng_Capacitance_Oscillation_Switching.pdf | 1.16 MB | Adobe PDF | View/Open |
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