Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/36072
Title: Effects of annealing temperature on Cu-Doped ZnO nanosheets
Authors: Liu, YL
Wang, JP
Xu, CH
Si, ZS
Xu, SS
Shi, SQ 
Keywords: Cu-doped ZnO
Nanosheets
Annealing
Nanowire
CuSO4 solutions
Issue Date: 2014
Publisher: Elsevier
Source: Journal of materials science & technology, 2014, v. 30, no. 9, p. 860-866 How to cite?
Journal: Journal of materials science & technology 
Abstract: The synthesis of Cu-doped ZnO nanosheets at room temperature was reported in our previous paper. The effects of annealing temperature on Cu-doped ZnO nanosheets were studied in this paper. Cu-doped ZnO nanosheets were annealed at 200-500 degrees C in air. The annealed specimens were characterized by scanning electron microscopy (SEM), X-ray diffraction (XRD) and transmission electron microscopy (TEM). The results show that Cu concentration in Cu-doped ZnO nanosheets reduced with increasing annealing temperature. When annealing temperature was lower than Zn melting point (410 degrees C), the morphologies of the Cu-doped ZnO nanosheets remained nearly the same as that before annealing. However, when the annealing temperature was over Zn melting point, Cu-doped ZnO nanosheets changed to nanowires, wormlike nanosheets or did not change. The change of Cu concentration in Cu-doped ZnO nanosheets is explained by oxidation thermodynamics. A physical model is suggested to explain the morphology changes of Cu-doped ZnO nanosheets, based on the existence of Cu-rich layer beneath Cu-doped ZnO nanosheets.
URI: http://hdl.handle.net/10397/36072
ISSN: 1005-0302
DOI: 10.1016/j.jmst.2014.07.014
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