Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/36065
Title: Ultrabroadband near-infrared luminescence and efficient energy transfer in Bi and Bi/Ho co-doped thin films
Authors: Xu, BB
Hao, JH
Guo, QB
Wang, JC
Bai, GX
Fei, B 
Zhou, SF
Qiu, JR
Issue Date: 2014
Publisher: Royal Society of Chemistry
Source: Journal of materials chemistry. C, Materials for optical and electronic devices, 2014, v. 2, no. 14, p. 2482-2487 How to cite?
Journal: Journal of materials chemistry. C, Materials for optical and electronic devices 
Abstract: Ultrabroadband near-infrared luminescence in the 1.0-2.4 mu m range has been observed in bismuth (Bi)-doped oxyfluoride germanate thin films prepared by pulsed laser deposition (PLD). The emission peak position shows a red-shift with decreasing oxygen pressure during PLD growth. Systematic investigation reveals that the origin of the luminescence could be ascribed to Bi clusters. With the sensitization of Bi near-infrared active centers, enhanced broadband similar to 2 mu m luminescence of Ho3+ is realized in Bi/Ho co-doped films, and a high energy transfer efficiency is obtained. These results may provide promise to realize planar waveguide lasers in the near-infrared region for integrated optics.
URI: http://hdl.handle.net/10397/36065
ISSN: 2050-7526 (print)
2050-7534 (online)
DOI: 10.1039/c3tc32177k
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