Please use this identifier to cite or link to this item:
http://hdl.handle.net/10397/36017
DC Field | Value | Language |
---|---|---|
dc.contributor | Institute of Textiles and Clothing | - |
dc.creator | Shu, HB | - |
dc.creator | Wang, SD | - |
dc.creator | Li, Y | - |
dc.creator | Yip, J | - |
dc.creator | Wang, JL | - |
dc.date.accessioned | 2016-04-15T08:36:14Z | - |
dc.date.available | 2016-04-15T08:36:14Z | - |
dc.identifier.issn | 0021-9606 | - |
dc.identifier.uri | http://hdl.handle.net/10397/36017 | - |
dc.language.iso | en | en_US |
dc.publisher | American Institute of Physics | en_US |
dc.rights | © 2014 AIP Publishing LLC. | en_US |
dc.rights | This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in H. B. Shu et al., J. Chem. Phys. 141, 064707 (2014) and may be found at https://dx.doi.org/10.1063/1.4892110 | en_US |
dc.title | Tunable electronic and optical properties of monolayer silicane under tensile strain : a many-body study | en_US |
dc.type | Journal/Magazine Article | en_US |
dc.identifier.volume | 141 | - |
dc.identifier.issue | 6 | - |
dc.identifier.doi | 10.1063/1.4892110 | - |
dcterms.abstract | The electronic structure and optical response of silicane to strain are investigated by employing first-principles calculations based on many-body perturbation theory. The bandgap can be efficiently engineered in a broad range and an indirect to direct bandgap transition is observed under a strain of 2.74%; the semiconducting silicane can even be turned into a metal under a very large strain. The transitions derive from the persistent downward shift of the lowest conduction band at the Gamma-point upon an increasing strain. The quasi-particle bandgaps of silicane are sizable due to the weak dielectric screening and the low dimension; they are rapidly reduced as strain increases while the exciton bound energy is not that sensitive. Moreover, the optical absorption edge of the strained silicane significantly shifts towards a low photon energy region and falls into the visible light range, which might serve as a promising candidate for optoelectronic devices. | - |
dcterms.accessRights | open access | en_US |
dcterms.bibliographicCitation | Journal of chemical physics, 2014, v. 141, no. 6, 64707, p. 064707-1-064707-6 | - |
dcterms.isPartOf | Journal of chemical physics | - |
dcterms.issued | 2014 | - |
dc.identifier.isi | WOS:000340713700048 | - |
dc.identifier.scopus | 2-s2.0-84906255828 | - |
dc.identifier.pmid | 25134590 | - |
dc.identifier.eissn | 1089-7690 | - |
dc.identifier.rosgroupid | 2014003343 | - |
dc.description.ros | 2014-2015 > Academic research: refereed > Publication in refereed journal | - |
dc.description.oa | Version of Record | en_US |
dc.identifier.FolderNumber | OA_IR/PIRA | en_US |
dc.description.pubStatus | Published | en_US |
Appears in Collections: | Journal/Magazine Article |
Files in This Item:
File | Description | Size | Format | |
---|---|---|---|---|
Shu_Tunable_Electronic_Optical.pdf | 1.46 MB | Adobe PDF | View/Open |
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