Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/35912
Title: Resistive switching in Perovskite-Oxide Capacitor-Type devices
Authors: Luo, Z
Lau, HK
Chan, PKL
Leung, CW 
Keywords: Nonvolatile memories
Pr0.7Ca0.3MnO3 (PCMO)
Resistive switching
Issue Date: 2014
Publisher: Institute of Electrical and Electronics Engineers
Source: IEEE transactions on magnetics, 2014, v. 50, no. 7, 3000904 How to cite?
Journal: IEEE transactions on magnetics 
Abstract: Resistive switching effect was demonstrated in the Ti/Pr0.7Ca0.3MnO3 (PCMO)/LaNiO3/Ti top-down device structure. A high resistance state was activated by a forming process. Hysteretic current-voltage (I-V) characteristic was observed by applying potential differences in the order of 5 V across the electrodes. I-V characteristics with different combinations of top and bottom electrodes suggested that the forming process changed the interface between the oxides and Ti electrodes, with the active region for resistive switching located at the Ti electrode/PCMO interface region. Such results show the possibility of high-density and nonvolatile memory applications based on the resistive switching effect.
URI: http://hdl.handle.net/10397/35912
ISSN: 0018-9464 (print)
1941-0069 (online)
DOI: 10.1109/TMAG.2013.2297408
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