Please use this identifier to cite or link to this item:
Title: Investigating the uneven current injection in Perovskite-based thin film bipolar resistance switching devices by thermal imaging
Authors: Luo, Z
Lau, HK
Chan, PKL
Leung, CW 
Keywords: Nonvolatile memories
Pr0.7Ca0.3MnO3 (PCMO)
Resistive switching (RS)
Thermal imaging
Issue Date: 2014
Publisher: Institute of Electrical and Electronics Engineers
Source: IEEE transactions on magnetics, 2014, v. 50, no. 7, 3000804 How to cite?
Journal: IEEE transactions on magnetics 
Abstract: Bipolar resistive switching (RS) phenomenon in planar Al/Pr0.7Ca0.3MnO3 (PCMO)/Ti devices was investigated by thermoreflectance method. Thermal images of devices undergoing switching were used to quantify the unevenness of injected current under different voltage bias. At low resistance state, the injected current at the current crowding area of the Al/PCMO interface was 1.6 times higher than other regions of the interface. The uneven distribution of injected current indicated the existence of localized resistance at the interface, which cannot be simply measured by electrical measurements. The thermoreflectance method demonstrates the potential applications for in situ current profiling of the RS devices.
ISSN: 0018-9464
EISSN: 1941-0069
DOI: 10.1109/TMAG.2013.2293780
Appears in Collections:Journal/Magazine Article

View full-text via PolyU eLinks SFX Query
Show full item record

Page view(s)

Last Week
Last month
Citations as of Jul 15, 2018

Google ScholarTM



Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.