Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/35732
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dc.contributorDepartment of Applied Physics-
dc.creatorZhu, QX-
dc.creatorZheng, M-
dc.creatorYang, MM-
dc.creatorZheng, RK-
dc.creatorWang, Y-
dc.creatorLi, XM-
dc.creatorShi, X-
dc.date.accessioned2016-04-15T08:35:23Z-
dc.date.available2016-04-15T08:35:23Z-
dc.identifier.issn0003-6951-
dc.identifier.urihttp://hdl.handle.net/10397/35732-
dc.language.isoenen_US
dc.publisherAmerican Institute of Physicsen_US
dc.rights© 2014 AIP Publishing LLC.en_US
dc.rightsThis article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Q. X. Zhu et al., Appl. Phys. Lett. 105, 241604 (2014) and may be found at https://dx.doi.org/10.1063/1.4904471en_US
dc.titleInterface correlated exchange bias effect in epitaxial Fe3O4 thin films grown on SrTiO3 substratesen_US
dc.typeJournal/Magazine Articleen_US
dc.identifier.volume105-
dc.identifier.issue24-
dc.identifier.doi10.1063/1.4904471-
dcterms.abstractWe report exchange bias effect in Fe3O4 films epitaxially grown on SrTiO3 substrates. This effect is related to the formation of Ti3+ -vacancy complexes at the surface of SrTiO3 in ultrahigh vacuum that in turn triggers the growth of a thin antiferromagnetic (AFM) FeO layer (similar to 5 nm) at the interface. The picture of antiferromagnetic FeO interacting with native ferrimagnetic Fe3O4 matrix reasonably accounts for this anomalous magnetic behavior. With increasing film thickness from 17 to 43 nm, the exchange bias effect and the magnetization anomaly associated with the AFM phase transition of the FeO layer are progressively weakened due to the increase in the volume fraction of the Fe3O4 phase, indicating the interfacial nature of the exchange coupling. Our results highlight the important role of interface engineering in controlling the magnetic properties of iron oxide thin films.-
dcterms.accessRightsopen accessen_US
dcterms.bibliographicCitationApplied physics letters, 2014, v. 105, no. 24, 241604, p. 241604-1-241604-5-
dcterms.isPartOfApplied physics letters-
dcterms.issued2014-
dc.identifier.isiWOS:000346643600021-
dc.identifier.scopus2-s2.0-84918805412-
dc.identifier.eissn1077-3118-
dc.identifier.rosgroupid2014000282-
dc.description.ros2014-2015 > Academic research: refereed > Publication in refereed journal-
dc.description.oaVersion of Recorden_US
dc.identifier.FolderNumberOA_IR/PIRAen_US
dc.description.pubStatusPublisheden_US
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