Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/35039
DC FieldValueLanguage
dc.contributorDepartment of Applied Physics-
dc.creatorZhuang, L-
dc.creatorWong, KH-
dc.date.accessioned2016-02-29T02:56:57Z-
dc.date.available2016-02-29T02:56:57Z-
dc.identifier.issn0040-6090-
dc.identifier.urihttp://hdl.handle.net/10397/35039-
dc.language.isoenen_US
dc.publisherElsevieren_US
dc.subjectMgxZn1−xOen_US
dc.subjectEpitaxialen_US
dc.subjectXRDen_US
dc.subjectPulsed laser depositionen_US
dc.titleMicrostructure and optical properties of MgxZn1−xO thin films grown by means of pulsed laser depositionen_US
dc.typeJournal/Magazine Articleen_US
dc.identifier.spage5607-
dc.identifier.epage5611-
dc.identifier.volume516-
dc.identifier.issue16-
dc.identifier.doi10.1016/j.tsf.2007.07.110-
dcterms.abstractThe single-phase epitaxial MgxZn1−xO (0.4 < x < 0.9) alloy films with wide band gap have been deposited on cubic LaAlO3 (LAO) (100) substrates by pulsed laser deposition (PLD). X-ray diffraction measurement and TEM photograph indicate that the cubic phase could be stabilized up to Zn content about 0.6 without any phase separation. Films and substrates have a good heteroepitaxial relationship of (100) MgxZn1−xO-
dcterms.abstract(100)LAO (out-of-plane) and (011)MgxZn1−xO-
dcterms.abstract(010)LAO (in-plane). The lattice parameters a of MgxZn1−xO films increase almost linearly with increasing ZnO composition, while the band gap energy of the materials increases from 5.17 to 5.27 eV by alloying with more MgO. The cross-section morphology reveals layer thickness of about 250–300 nm and AFM scan over a 30 μm × 30 μm area reveals a surface roughness Ra of about 100 nm.-
dcterms.bibliographicCitationThin solid films, 2008, v. 516, no. 16, p. 5607-5611-
dcterms.isPartOfThin solid films-
dcterms.issued2008-
dc.identifier.eissn1879-2731-
dc.identifier.rosgroupidr40324-
dc.description.ros2008-2009 > Academic research: refereed > Publication in refereed journal-
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