Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/35037
Title: A comparative study of in situ annealing effects on the electrical transport behavior of epitaxial La0.5Sr0.5CoO3 and La0.7Sr0.3MnO3 thin films
Authors: Wu, W
Wong, KH
Choy, CL 
Keywords: Annealing
Conductivity
Oxides
Laser ablation
Issue Date: 2001
Publisher: Elsevier
Source: Thin solid films, 2001, v. 385, no. 1-2, p. 298-301 How to cite?
Journal: Thin solid films
Abstract: Epitaxial La0.5Sr0.5CoO3 and La0.7Sr0.3MnO3 thin films have been grown on (100) LaAlO3 substrates by the pulsed laser deposition method. After deposition the films were in situ annealed at 2×10−6–10 torr of oxygen atmosphere. Electrical resistivity measurements reveal that the La0.5Sr0.5CoO3 films are highly sensitive to the thermal treatments. With the oxygen pressure being reduced, a metallic-semiconducting transition is induced. We demonstrate that the oxygen content in the films may not be the only factor that controls the transition observed. In contrast, the La0.7Sr0.3MnO3 films are insensitive to the annealing and keep a high electrical conductivity even after being treated at 2×10−6 torr of ambient oxygen. The different thermal stability observed for the two kinds of films is discussed in terms of their structural characteristics.
URI: http://hdl.handle.net/10397/35037
ISSN: 0040-6090
DOI: 10.1016/S0040-6090(01)00778-7
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