Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/34941
Title: Tensile strength of aluminium nitride films
Authors: Gang Zong, D
Ong, CW 
Aravind, M
Po Tsang, M
Choy, CL 
Lu, D
Ma, D
Issue Date: 2004
Publisher: Taylor & Francis
Source: Philosophical magazine, 2004, v. 84, no. 31, p. 3353-3373 How to cite?
Journal: Philosophical magazine
Abstract: Two-layered aluminium nitride (AlN)/silicon nitride microbridges were fabricated for microbridge tests to evaluate the elastic modulus, residual stress and tensile strength of the AlN films. The silicon nitride layer was added to increase the robustness of the structure. In a microbridge test, load was applied to the centre of a microbridge and was gradually increased by a nano-indenter equipped with a wedge tip until the sample was broken, while displacement was recorded coherently. Measurements were performed on single-layered silicon nitride microbridges and two-layered AlN/silicon nitride microbridges respectively. The data were fitted to a theory to derive the elastic modulus, residual stress and tensile strength of the silicon nitride films and AlN films. For the AlN films, the three parameters were determined to be 200, 0.06 and 0.3 GPa, respectively. The values of elastic modulus obtained were consistent with those measured by conventional nano-indentation method. The tensile strength value can be used as a reference to reflect the maximum tolerable tensile stress of AlN films when they are used in micro-electromechanical devices.
URI: http://hdl.handle.net/10397/34941
ISSN: 1478-6435 (print)
1478-6443 (online)
DOI: 10.1080/14786430412331283604
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