Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/34542
Title: Well-aligned single-crystalline GaN nanocolumns and their field emission properties
Authors: Chen, Z
Cao, C
Li, WS
Surya, C 
Issue Date: 2009
Publisher: American Chemical Society
Source: Crystal growth and design, 2009, v. 9, no. 2, p. 792-796 How to cite?
Journal: Crystal growth and design
Abstract: Well-aligned GaN nanocolumns on silicon substrate were fabricated by simple and low-cost chemical vapor deposition without any catalyst. The structure and morphology of the as-synthesized GaN nanocolumns were characterized by X-ray diffraction and scanning and transmission electron microscopies. The aligned GaN nanocolumn arrays exhibited excellent field emission properties with a low turn-on field of 2.6 V/μm (0.01 mA/cm2) and high stability at room temperature, which is sufficient for applications of field emission displays and vacuum nanoelectronic devices. The room-temperature photoluminescence emission with a strong peak at 369 nm indicates that the well-aligned GaN nanocolumns have potential application in light-emitting nanodevices.
URI: http://hdl.handle.net/10397/34542
ISSN: 1528-7483 (print)
1528-7505 (online)
DOI: 10.1021/cg800321x
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