Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/33920
Title: Memory effect in polymer brushes containing pendant carbazole groups
Authors: Wei, Y
Gao, D
Li, L
Shang, S 
Keywords: Atom transfer radical polymerization
Memory effect
Polymer brushes
Issue Date: 2011
Publisher: Elsevier
Source: Polymer, 2011, v. 52, no. 6, p. 1385-1390 How to cite?
Journal: Polymer (United Kingdom) 
Abstract: Poly(9-(2-(4-vinyl(benzyloxy)ethyl)-9H-carbazole)) (PVBEC) brushes, have been successfully prepared on the silicon surfaces via surface-initiated atom transfer radical polymerization (ATRP). Conductance switching at a voltage of about -2.1 V is observed in the memory device based on the PVBEC brushes. The fabricated device shows the good memory characteristics as the ON/OFF current ratio up to 105, and enduring 106 read cycles under -1 V pulse voltages. Compared with those of the conventional Si/PVBEC/Al device fabricated by spin-coating, the switch voltage is lower and the ON/OFF current ratio is higher in the volatile Si-g-PVBEC/Al memory device.
URI: http://hdl.handle.net/10397/33920
ISSN: 0032-3861
EISSN: 1873-2291
DOI: 10.1016/j.polymer.2011.01.044
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