Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/33625
Title: Influence of double buffer layers on properties of Ga-polarity GaN films grown by rf-plasma assisted molecular-beam epitaxy
Authors: Zhu, CF
Xie, JQ
Fong, WK
Surya, C 
Keywords: Electrical properties
Epitaxial growth
GaN thin films
Molecular beam epitaxy
Raman scattering
Issue Date: 2003
Publisher: North-Holland
Source: Materials letters, 2003, v. 57, no. 16-17, p. 2413-2416 How to cite?
Journal: Materials letters 
Abstract: Ga-polarity GaN thin films were grown on sapphire (0001) substrates by rf-plasma assisted molecular beam epitaxy (MBE) using a double buffer layer, which consisted of an intermediate-temperature GaN buffer layer (ITBL) grown at 690 °C and a conventional AlN buffer layer deposited at 740 °C. Raman scattering spectra showed that the E 2 (high) mode of GaN film grown on conventional AlN buffer layer is at about 570 cm -1, and shifts to 568 cm -1 when an ITBL was used. This indicates that the ITBL leads to the relaxation of residual strain in GaN film caused by mismatches in the lattice constants and coefficients of thermal expansion between the GaN epilayer and the sapphire substrate. Compared to the GaN film grown on the conventional AlN buffer layer, the GaN film grown on an ITBL shows higher Hall mobility and substantial reduction in the flicker noise levels with a Hooge parameter of 3.87 × 10 -4, which is believed to be, to date, the lowest reported for GaN material. These results imply that the quality of Ga-polarity GaN films grown by MBE can be significantly improved by using an ITBL in addition to the conventional low-temperature AlN buffer layer.
URI: http://hdl.handle.net/10397/33625
ISSN: 0167-577X
EISSN: 1873-4979
DOI: 10.1016/S0167-577X(02)01246-6
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