Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/33099
Title: Regulating infrared photoresponses in reduced graphene oxide phototransistors by defect and atomic structure control
Authors: Chang, H
Sun, Z
Saito, M
Yuan, Q
Zhang, H
Li, J
Wang, Z
Fujita, T
Ding, F 
Zheng, Z 
Yan, F 
Wu, H
Chen, M
Ikuhara, Y
Keywords: Defect
Infrared
Photoresponse
Phototransistor
Reduced graphene oxide
Issue Date: 2013
Publisher: American Chemical Society
Source: ACS nano, 2013, v. 7, no. 7, p. 6310-6320 How to cite?
Journal: ACS nano 
Abstract: Defects play significant roles in properties of graphene and related device performances. Most studies of defects in graphene focus on their influences on electronic or luminescent optical properties, while controlling infrared optoelectronic performance of graphene by defect engineering remains a challenge. In the meantime, pristine graphene has very low infrared photoresponses of ∼0.01 A/W due to fast photocarrier dynamics. Here we report regulating infrared photoresponses in reduced graphene oxide phototransistors by defect and atomic structure control for the first time. The infrared optoelectronic transport and photocurrent generation are significantly influenced and well controlled by oxygenous defects and structures in reduced graphene oxide. Moreover, remarkable infrared photoresponses are observed in photoconductor devices based on reduced graphene oxide with an external responsivity of ∼0.7 A/W, at least over one order of magnitude higher than that from pristine graphene. External quantum efficiencies of infrared devices reach ultrahigh values of ∼97%, which to our knowledge is one of the best efficiencies for infrared photoresponses from nonhybrid, pure graphene or graphene-based derivatives. The flexible infrared photoconductor devices demonstrate no photoresponse degradation even after 1000 bending tests. The results open up new routes to control optoelectronic behaviors of graphene for high-performance devices.
URI: http://hdl.handle.net/10397/33099
ISSN: 1936-0851
EISSN: 1936-086X
DOI: 10.1021/nn4023679
Appears in Collections:Journal/Magazine Article

Access
View full-text via PolyU eLinks SFX Query
Show full item record

SCOPUSTM   
Citations

32
Last Week
0
Last month
0
Citations as of Aug 20, 2017

WEB OF SCIENCETM
Citations

31
Last Week
0
Last month
0
Citations as of Aug 20, 2017

Page view(s)

56
Last Week
4
Last month
Checked on Aug 20, 2017

Google ScholarTM

Check

Altmetric



Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.