Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/33074
Title: High-mobility GaN epilayer grown by RF plasma-assisted molecular beam epitaxy on intermediate-temperature GaN buffer layer
Authors: Fong, WK
Zhu, CF
Leung, BH
Surya, C 
Keywords: Molecular beam epitaxy
Nitrides
Semiconducting III-V materials
Issue Date: 2001
Publisher: North-Holland
Source: Journal of crystal growth, 2001, v. 233, no. 3, p. 431-438 How to cite?
Journal: Journal of crystal growth 
Abstract: High-mobility GaN thin films were grown by RF plasma-assisted molecular beam epitaxy on (0001) sapphire. A conventional low-temperature buffer layer and an intermediate-temperature buffer layer (ITBL) were first deposited before the growth of the epitaxial layer. Electron mobility is found to vary strongly with the ITBL thickness with value as high as 460cm2V-1s-1 obtained from the sample grown on a 800nm ITBL on top of a low-temperature buffer layer. A systematic shift in the photoluminescence peak position, following the same trend as the mobility, suggests the relaxation of residual strain in the top GaN epitaxial layer by utilizing an ITBL. Detailed characterizations of G-R noise indicate reduction of deep levels by over an order of magnitude for the sample with 800nm ITBL compared to the control sample which has the same total thickness but with only the low-temperature buffer layer.
URI: http://hdl.handle.net/10397/33074
ISSN: 0022-0248
DOI: 10.1016/S0022-0248(01)01592-5
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