Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/32731
Title: Preparation and properties of PTCR ceramics with low resistivity sintered at low temperature
Authors: Huang, ZZ
Adikary, SU
Chan, HLW 
Choy, CL 
Issue Date: 2002
Publisher: Springer
Source: Journal of materials science : materials in electronics, 2002, v. 13, no. 4, p. 221-224 How to cite?
Journal: Journal of materials science : materials in electronics 
Abstract: Two types of positive temperature coefficient of resistance (PTCR) ceramics with relatively low room-temperature resistivity were prepared using the four-component system (Ba, Sr, Ca, Pb)TiO3 with lanthanum oxide (La2O3) as the donor dopant and boron nitride (BN) as the sintering aid. The first type of materials was sintered at 1080 °C for 2 h. It has a Curie point Tc ∼ 120 °C, a room-temperature resistivity Ρν of 58 Ωcm and a resistivity jump ΔΡ of 3 × 104 Ωcm around Tc. For the second type of materials that were sintered at 1100 °C for 20 min, Tc ∼ 120 °C, Ρν = 19 Ωcm and ΔΡ = 104 Ωcm. These PTCR ceramics are considered to be suitable materials for fabricating multilayer PTCR devices by the co-firing process. Factors associated with the composition that influence the PTCR property of the materials are discussed.
URI: http://hdl.handle.net/10397/32731
ISSN: 0957-4522
EISSN: 1573-482X
DOI: 10.1023/A:1014879917445
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