Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/32650
Title: A study on la incorporation in transition-metal (Y, Zr, and Nb) oxides as gate dielectric of pentacene organic thin-film transistor
Authors: Han, CY
Tang, WM 
Leung, CH
Che, CM
Lai, PT
Keywords: High-κ gate dielectric
La incorporation
Low-frequency noise (LFN)
Organic thin-film transistor (OTFT)
Transition-metal (TM) oxides
Issue Date: 2015
Publisher: Institute of Electrical and Electronics Engineers
Source: IEEE transactions on electron devices, 2015, v. 62, no. 7, p. 2313-2319 How to cite?
Journal: IEEE transactions on electron devices 
Abstract: The effects of La incorporation in three transition-metal (TM = Y, Zr, and Nb) oxides as gate dielectric of pentacene organic thin-film transistor (OTFT) have been investigated. La incorporated in Zr oxide and Nb oxide greatly decreases their trap density (as confirmed by low-frequency noise measurement) by passivating their oxygen vacancies, resulting in larger pentacene grains grown on them (as shown by atomic force microscopy) and thus higher carrier mobility for the OTFT due to less grain-boundary scattering. The carrier mobility of the ZrLaO- and NbLaO-OTFTs is about 70 times and 300 times higher than that of their counterparts based on ZrO2 and Nb2O5, respectively. However, La incorporated in Y2O3 increases its trap density by roughening its surface, causing smaller pentacene grains grown and thus lower carrier mobility. On the other hand, all the three TM elements incorporated in La2O3 can result in more moisture-resistant gate dielectric with smoother surface, resulting in larger pentacene grains grown and thus higher carrier mobility for the OTFT.
URI: http://hdl.handle.net/10397/32650
ISSN: 0018-9383
EISSN: 1557-9646
DOI: 10.1109/TED.2015.2432080
Appears in Collections:Journal/Magazine Article

Access
View full-text via PolyU eLinks SFX Query
Show full item record

SCOPUSTM   
Citations

4
Last Week
0
Last month
0
Citations as of Aug 18, 2017

WEB OF SCIENCETM
Citations

5
Last Week
0
Last month
0
Citations as of Aug 14, 2017

Page view(s)

35
Last Week
0
Last month
Checked on Aug 20, 2017

Google ScholarTM

Check

Altmetric



Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.