Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/32585
Title: Effect of Mg doping on ferroelectric PST thin films for high tunable devices
Authors: Li, XT
Huo, WL
Mak, CL 
Sui, S
Weng, WJ
Han, GR
Shen, G
Du, PY
Keywords: Dielectric properties
Sol-gel growth
Thin films
Issue Date: 2008
Publisher: Elsevier Science Sa
Source: Materials chemistry and physics, 2008, v. 108, no. 2-3, p. 417-420 How to cite?
Journal: Materials Chemistry and Physics 
Abstract: Pb0.4Sr0.6MgxTi1-xO3-x (PSMT) thin films were prepared on ITO/glass substrate by a sol-gel technique. It exhibited a typical polycrystalline cubic perovskite structure without any evidence of secondary phase formation. The crystallinity and the dielectric constant of the thin film increased with increasing Mg below x = 0.03 and then decreased with increasing Mg above x = 0.03. The effect of Mg doping content on the dielectric properties of the Pb0.4Sr0.6MgxTi1-xO3-x thin films also depended on the heat-treatment temperature. When Mg doping was light, the highest dielectric constant of the thin film appeared at high heat-treatment temperature. Whereas, when Mg doping was heavy, it appeared at low temperature. The maximum tunabilities of about 30%, 30% and 40% were obtained when Mg doping contents are 0.01, 0.03 and 0.05, respectively. This demonstrates that Mg can improve the microstructure of PST thin film and reduce its lattice distortion. In some conditions, doping Mg could increase the tunable behavior of the thin films. So Mg-doped PST thin films are good candidate for developing tunable devices.
URI: http://hdl.handle.net/10397/32585
DOI: 10.1016/j.matchemphys.2007.10.018
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