Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/32550
Title: Growth of highly (100)-oriented Zr-rich PZT films on Pt/Ti/SiO 2/Si substrates by a sol-gel process
Authors: Fu, X
Song, Z
Lin, C
Chan, HLW 
Choy, CL 
Keywords: Ferroelectric
Pyroelectric
PZT
Sol-gel
Issue Date: 2001
Publisher: Taylor & Francis Inc.
Source: Ferroelectrics, 2001, v. 260, no. 1, p. 175-181 How to cite?
Journal: Ferroelectrics 
Abstract: Highly (100)-oriented Zr-rich PZT 80/20 and PZT 85/15 films and randomly oriented PZT 70/30 films were successfully prepared on (111) Pt coated Si substrates by a sol-gel process followed by rapid thermal annealing at 700 °C for 200 s. The dielectric properties of the films were measured. The (100)-oriented PZT 85/15 film has higher 2Pr (41.4 μC/cm 2) and 2Ec (111 kV/cm) than the random oriented PZT 70/30 film.
URI: http://hdl.handle.net/10397/32550
ISSN: 0015-0193
EISSN: 1563-5112
DOI: 10.1080/00150190108016013
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