Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/32505
Title: Optical gain of interdiffused GaInNAs/GaAs quantum wells
Authors: Chan, MCY
Surya, C 
Wai, PKA 
Issue Date: 2002
Publisher: Springer
Source: Applied physics. A, Materials science & processing, 2002, v. 75, no. 5, p. 573-576 How to cite?
Journal: Applied physics. A, Materials science & processing 
Abstract: A self-consistent model for the band structure and optical gain spectra in interdiffused GaxIn1-xN0.04As0.96/GaAs single quantum wells are studied theoretically using Fick's Law and the Fermi Golden Rule. Due to quantum-well interdiffusion, the peak gain and its peak vary with the annealing time. Our results show that the interdiffusion technique can be used to tune the operation wavelength for multi-wavelength applications without degradation of device performance.
URI: http://hdl.handle.net/10397/32505
ISSN: 0947-8396
EISSN: 1432-0630
DOI: 10.1007/s003390101031
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