Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/32428
Title: In-plane dielectric properties of epitaxial Ba(Zr0.3Ti0.7)O3 thin film grown on lsat (001) single crystal substrate
Authors: Yun, P
Wang, DY
Ying, Z
Song, ZT
Feng, SL
Wang, Y 
Chan, HLW 
Keywords: BZT thin film
PLD
Tunability
Issue Date: 2007
Publisher: Taylor & Francis
Source: Integrated ferroelectrics, 2007, v. 93, no. 1, p. 154-160 How to cite?
Journal: Integrated ferroelectrics 
Abstract: Ba(Zr0.3Ti0.7)O3 (BZT) thin film was deposited on (LaAlO3)0.3(Sr2AlTaO6)0. 35 [LSAT] (001) single crystal substrate using pulsed laser deposition. The X-ray diffraction pattern reveals an epitaxial growth of the film with a pure perovskite phase. The in-plane dielectric properties of the Ba(Zr0.3Ti0.7)O3 thin film was characterized as a function of frequency (1 kHz-500 MHz), temperature (125 K-373 K) and dc electric field (0-13.3 V/m) using gold interdigital electrodes. The relative permittivity of the film exhibits strong dependence of the dc bias field over the whole frequency range. The relative permittivity has a high tunability of 73%-50% at room temperature in the frequency range of 1 kHz to 500 MHz, showing the potential of our Ba(Zr0.3Ti0.7)O3 thin film to be used in microwave devices.
URI: http://hdl.handle.net/10397/32428
ISSN: 1058-4587
EISSN: 1607-8489
DOI: 10.1080/10584580701756698
Appears in Collections:Journal/Magazine Article

Access
View full-text via PolyU eLinks SFX Query
Show full item record

SCOPUSTM   
Citations

1
Last Week
0
Last month
0
Citations as of Jul 29, 2017

WEB OF SCIENCETM
Citations

1
Last Week
0
Last month
0
Citations as of Aug 14, 2017

Page view(s)

43
Last Week
3
Last month
Checked on Aug 14, 2017

Google ScholarTM

Check

Altmetric



Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.