Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/31614
Title: Field-effect transistors based on amorphous black phosphorus ultrathin films by pulsed laser deposition
Authors: Yang, Z
Hao, J 
Yuan, S
Lin, S
Yau, HM
Dai, J 
Lau, SP 
Keywords: Amorphous ultrathin films
Black phosphorus
Field-effect transistors
Pulsed laser deposition
Wafer-scale
Issue Date: 2015
Publisher: Wiley-VCH
Source: Advanced materials, 2015, v. 27, no. 25, p. 3748-3754 How to cite?
Journal: Advanced materials 
Abstract: Amorphous black phosphorus (a-BP) ultrathin films are deposited by pulsed laser deposition. a-BP field-effect transistors, exhibiting high carrier mobility and moderate on/off current ratio, are demonstrated. Thickness dependence of the bandgap, mobility, and on/off ratio are observed. These results offer not only a new nanoscale member in the BP family, but also a new opportunity to develop nanoelectronic devices.
URI: http://hdl.handle.net/10397/31614
ISSN: 0935-9648
EISSN: 1521-4095
DOI: 10.1002/adma.201500990
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