Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/31516
Title: Anisotropy of surface roughness in diamond turning of brittle single crystals
Authors: Cheung, CF 
To, S 
Lee, WB 
Keywords: Anisotropy
Arithmetic roughness
Brittle regime
Brittle-ductile transition
Chip formation
Critical depth of cut
Crystallographic orientation
Degree of roughness anisotropy
Ductile regime
Optimization
Periodicity
Process parameters
Surface roughness
Ultraprecision diamond turning
Variation
Issue Date: 2002
Source: Materials and manufacturing processes, 2002, v. 17, no. 2, p. 251-267 How to cite?
Journal: Materials and Manufacturing Processes 
Abstract: This paper deals with an investigation of the effect of crystallographic orientation and process parameters on the surface roughness of brittle silicon single crystals in ultraprecision diamond turning. The process parameters involve the depth of cut, feed rate, and spindle speed. Experimental results indicate that anisotropy in surface finish occurs when the cutting direction relative to the crystal orientation varies. There exists a periodic variation of surface roughness per workpiece revolution, which is closely related to the crystallographic orientation of the crystals being cut. Such an anisotropy of surface roughness can be minimized with an appropriate selection of the feed rate, spindle speed, and depth of cut. The findings provide a means for the optimization of the surface quality in diamond turning of brittle silicon single crystals.
URI: http://hdl.handle.net/10397/31516
ISSN: 1042-6914
DOI: 10.1081/AMP-120003533
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