Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/31502
Title: High-performance low-voltage organic transistor memories with room-temperature solution-processed hybrid nanolayer dielectrics
Authors: Xia, G
Wang, S
Zhao, X
Zhou, L 
Issue Date: 2013
Publisher: Royal Society of Chemistry
Source: Journal of materials chemistry C, 2013, v. 1, no. 20, p. 3291-3296 How to cite?
Journal: Journal of materials chemistry C 
Abstract: A gold nanoparticle enhanced organic transistor non-volatile memory (ONVM) operated at ultralow voltages of up to -1 V has been achieved by facile room-temperature solution-processed hybrid nanolayer dielectrics. The amorphous ZrTiOx nanolayer dielectrics exhibit a high-k value of 18.9 and a high capacitance of 705 nF cm-2. With the modification of the octadecylphosphonic acid (ODPA) monolayer, the a-ZrTiOx/ODPA hybrid nanolayer dielectrics exhibit a high capacitance of 514 nF cm-2 and a very low leakage current density of 2 × 10-7 A cm -2. The pentacene transistor-based ONVMs with the a-ZrTiO x/ODPA hybrid nanolayer dielectrics could be operated in operating voltages as low as -1 V. With ultralow operating voltages, ONVMs show high performances, such as high hole mobility (0.3 cm2 V-1 s-1), large memory window (1.5 V), and long charge retention time (4 × 104 s) directly in ambient air. Our results suggest the great potential of low-temperature solution-processed hybrid nanolayer dielectrics for the realization of low-power and high-performance organic electronic devices.
URI: http://hdl.handle.net/10397/31502
ISSN: 2050-7526
EISSN: 2050-7534
DOI: 10.1039/c3tc30149d
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