Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/31397
Title: Effects of electric-field-induced piezoelectric strain on the electronic transport properties of La0.9Ce0.1MnO3 thin films
Authors: Zheng, RK
Dong, SN
Wu, YQ
Zhu, QX
Wang, Y 
Chan, HLW 
Li, XM
Luo, HS
Li, XG
Keywords: Electronic transport
Epitaxial film
Magnetoresistance
Piezoelectric strain
Issue Date: 2012
Publisher: Elsevier
Source: Thin solid films, 2012, v. 525, p. 45-48 How to cite?
Journal: Thin solid films 
Abstract: The authors constructed multiferroic structures by growing La 0.9Ce0.1MnO3 (LCEMO) thin films on piezoelectric 0.68Pb(Mg1/3Nb2/3)O3-0. 32PbTiO3 (PMN-PT) single-crystal substrates. Due to the efficient elastic coupling at the interface, the electric-field-induced piezoelectric strain in PMN-PT substrates is effectively transferred to LCEMO films and thus, leads to a decrease in the resistance and an increase in the magnetoresistance of the films. Particularly, it was found that the resistance-strain coefficient [ΔR/Rfilm/Δεzzfilm] of the LCEMO film was considerably enhanced by the application of magnetic fields, demonstrating strong coupling between the lattice and the spin degrees of freedom. ΔR/Rfilm/Δεzzfilm at 122 K was enhanced by ∼ 28.8% by a magnetic field of 1.2 T. An analysis of the overall results demonstrates that the phase separation is crucial to understand strain-mediated modulation of electronic transport properties of manganite film/PMN-PT multiferroic structures.
URI: http://hdl.handle.net/10397/31397
ISSN: 0040-6090
EISSN: 1879-2731
DOI: 10.1016/j.tsf.2012.10.088
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