Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/31276
Title: Simulation of flexoelectricity effect on imprint behavior of ferroelectric thin films
Authors: Cao, HX
Lo, VC
Li, ZY
Keywords: Flexoelectricity
Imprint
Landau-Khalatnikov theory
Issue Date: 2006
Publisher: Pergamon Press
Source: Solid state communications, 2006, v. 138, no. 8, p. 404-408 How to cite?
Journal: Solid state communications 
Abstract: The impact of flexoelectricity on the imprint behavior in ferroelectric thin films has been investigated within the framework of Landau-Khalatnikov theory, by incorporating the coupling effect between the stress gradient and polarization. It is found that the imprint phenomenon can be in part induced by flexoelectricity. In the presence of flexoelectric coupling, the compressive stress shifts the hysteresis loop to the negative electric field axis, but the tensile stress shifts it to the opposite direction, which is in good agreement with experimental result. Besides, the characteristic length of stress distribution has a significant influence on the upper part of hysteresis loop. It highlights the pressing need to avoid the stress gradient in order to prevent degradation of device performance in ferroelectric thin films.
URI: http://hdl.handle.net/10397/31276
ISSN: 0038-1098
EISSN: 1879-2766
DOI: 10.1016/j.ssc.2006.03.031
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