Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/31254
Title: Fabrication and characterization of indium-tin-oxide/GaN visible-blind UV detectors
Authors: Lui, HF
Fong, WK
Surya, C 
Cheung, CH
Djurisic, AB
Issue Date: 2006
Publisher: Wiley-Vch, Inc
Source: Physica status solidi (c) current topics in solid state physics, 2006, v. 3, p. 2295-2298 How to cite?
Journal: Physica Status Solidi (C) Current Topics in Solid State Physics 
Abstract: We report the fabrication and characterization of visible-blind GaN-based UV photodetectors with indium-tin-oxide (ITO)/GaN Schottky junctions. We have systematically studied the optimal growth conditions for the ITO layers. Responsivity of 0.041 A/W was obtained for the optimised ITO/GaN UV detectors at 350nm. The I-V characteristics show that the reverse leakage currents of the devices are strongly dependent on the deposition conditions of the ITO. The experimental results indicate that interfacial traps play an important role on the optoelectronic properties of the devices. To improve the ITO/GaN interface, a thin Ni layer was deposited between the ITO and the GaN. Our results show that this leads to significant improvements in the leakage current, low-frequency excess noise and the UV-to-visible rejection ratio.
Description: 6th International Conference on Nitride Semiconductors, ICNS-6, Bremen, 28-2 September 2005
URI: http://hdl.handle.net/10397/31254
ISSN: 1862-6351
DOI: 10.1002/pssc.200565358
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