Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/31197
Title: Ultraviolet electroluminescence from randomly assembled n-SnO2 Nanowiresp-GaN:Mg Heterojunction
Authors: Yang, HY
Yu, SF
Liang, HK
Lau, SP 
Pramana, SS
Ferraris, C
Cheng, CW
Fan, HJ
Keywords: SnO2 nanowires
Light-emitting diodes
Ultraviolet emission
Defect state recombination
Issue Date: 2010
Publisher: American Chemical Society
Source: ACS applied materials and interfaces, 2010, v. 2, no. 4, p. 1191-1194 How to cite?
Journal: ACS applied materials and interfaces 
Abstract: Electroluminescence characteristics of a heterojunction light-emitting diode, which was fabricated by depositing a layer of randomly assembled n-SnO2 nanowires on p-GaN:Mg/sapphire substrate via vapor transport method, were investigated at room temperature. Peak wavelength emission at around 388 nm was observed for the diode under forward bias, This is mainly related to the radiative recombination of weakly bounded excitons at the shallow-trapped states of SnO2 nanowires, Under reverse bias, near bandedge emission from the p-GaN:Mg/sapphire leads to the observation of emission peak at around 370 nm.
URI: http://hdl.handle.net/10397/31197
ISSN: 1944-8244
EISSN: 1944-8252
DOI: 10.1021/am1000294
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