Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/30960
Title: Transient sensitivity of sectorial split-drain magnetic field-effect transistor
Authors: Yang, Z
Siu, SL
Tam, WS
Kok, CW
Leung, CW 
Lai, PT
Wong, H
Pong, PWT
Keywords: Hysteresis
Magnetic field-effect transistor (MAGFET)
Sectorial
Sensitivity
Split-drain
Transient sensitivity
Issue Date: 2013
Publisher: Institute of Electrical and Electronics Engineers
Source: IEEE transactions on magnetics, 2013, v. 49, no. 7, 6559182, p. 4048-4051 How to cite?
Journal: IEEE transactions on magnetics 
Abstract: This paper proposed an analytical model on the geometric dependence of the transient sensitivity and transient sensing hysteresis of sectorial split-drain magnetic field-effect transistors (SD-MAGFETs). We also conjectured that the transient sensing hysteresis is caused by the charge trapped on channel boundary, and is also geometric dependent. Experimental results are presented which show good consistence with the analytical derivation. The derived analytical model and experimental results can be used as a design guideline for the optimization and trade-off of the transient sensitivity and transient sensing hysteresis of the sectorial SD-MAGFETs.
URI: http://hdl.handle.net/10397/30960
ISSN: 0018-9464
EISSN: 1941-0069
DOI: 10.1109/TMAG.2013.2241034
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