Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/30809
Title: Negative photoconductivity and memory effects of germanium nanocrystals embedded in HfO 2 dielectric
Authors: Wang, S
Liu, W
Zhang, M
Song, Z
Lin, C
Dai, JY 
Lee, PF
Chan, HLW 
Choy, CL 
Keywords: Ge Nanocrystals
HfO 2 Dielectric
Memory
Negative Photoconductivity
Issue Date: 2006
Publisher: American Scientific Publishers
Source: Journal of nanoscience and nanotechnology, 2006, v. 6, no. 1, p. 205-208 How to cite?
Journal: Journal of nanoscience and nanotechnology 
Abstract: A metal-insulator-semiconductor (MIS) structure containing an HfO 2/SiO 2 stack tunnel layer, isolated Germanium (Ge) nanocrystals, and an HfO 2 capping layer, was obtained by an electron-beam evaporation method. A high-resolution transmission electron microscopy (HRTEM) study revealed that uniform and pronounced Ge nanocrystals had formed after annealing. Raman spectroscopy provided evidence for the formation of Ge-Ge bonds and the optimal annealing temperature for the crystallization ratio of the Ge. The electric properties of the MIS structure were characterized by capacitance-voltage (C-V) and current-voltage (I-V) measurements at room temperature. Negative photoconductivity was observed when the structure was under a forward bias, which screened the bias voltage, resulting in a decrease in the current at a given voltage and a negative shift in flat band voltage. A relatively high stored charge density of 3.27×10 12 cm -2 was also achieved.
URI: http://hdl.handle.net/10397/30809
ISSN: 1533-4880 (print)
DOI: 10.1166/jnn.2006.048
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