Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/30710
Title: Photoluminescence of rapid-thermal annealed Mg-doped GaN films
Authors: Wang, LS
Fong, WK
Surya, C 
Cheah, KW
Zheng, WH
Wang, ZG
Keywords: Metalorganic chemical vapor deposition
p-Type GaN
Photoluminescence
Rapid-thermal annealing
X-ray diffraction
Issue Date: 2001
Publisher: Pergamon-Elsevier Science Ltd
Source: Solid-state electronics, 2001, v. 45, no. 7, p. 1153-1157 How to cite?
Journal: Solid-State Electronics 
Abstract: We report the investigation of temperature and excitation power dependence in photoluminescence spectroscopy measured in Mg-doped GaN epitaxial layers grown on sapphire by metalorganic chemical vapor deposition. The objective is to examine the effects of rapid-thermal annealing on Mg-related emissions. It is observed that the peak position of the 2.7-2.8 eV emission line is a function of the device temperature and annealing conditions. The phenomenon is attributed to Coulomb-potential fluctuations in the conduction and valence band edge and impurity levels due to the Mg-related complex dissociation. The blue shift of the 2.7-2.8 eV emission line with increasing excitation power provides clear evidence that a donor-acceptor recombination process underlies the observed emission spectrum. In addition, quenching of minor peaks at 3.2 and 3.3 eV are observed and their possible origin is discussed.
URI: http://hdl.handle.net/10397/30710
ISSN: 0038-1101
DOI: 10.1016/S0038-1101(01)00043-0
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