Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/30709
Title: Degradation of low-frequency noise in AlGaN/GaN HEMTS due to hot-electron stressing
Authors: Jha, SK
Zhu, CF
Pilkuhn, MH
Surya, C 
Schweizer, H
Keywords: Degradation
HEMT
Low-frequency noise
Issue Date: 2007
Publisher: World Scientific Publ Co Pte Ltd
Source: Fluctuation and noise letters, 2007, v. 7, no. 1, p. l91-l100 How to cite?
Journal: Fluctuation and Noise Letters 
Abstract: We report on the degradation of low-frequency excess noise in recessed gate AlGaN/GaN HEMTs due to hot-electron stressing. The I-V characteristics and the low-frequency noise power spectral densities, Sv(J), of the open circuit voltage fluctuations across the drain source terminal were characterized with the stress time. Based on these results, we observed that the overall low-frequency noise degradation process can be identified to occur in two distinct phases. In the first phase, devices initially show fluctuations in the noise properties around a relatively constant average value. Detailed characterizations of the gate-source bias, VGS, dependence of Sv(f) at cryogenic temperatures indicate signature-patterns in the variations of Sv(f) as a function of V GS. This is shown to arise from the modulation of the percolation paths of the carriers in the two-dimensional electron gas (2DEG). The onset of the second phase of degradation arises from the irreversible generation of interface states at the Al-GaN/GaN hetero-interface.
URI: http://hdl.handle.net/10397/30709
DOI: 10.1142/S0219477507003726
Appears in Collections:Journal/Magazine Article

Access
View full-text via PolyU eLinks SFX Query
Show full item record

Page view(s)

44
Last Week
1
Last month
Checked on Jul 16, 2017

Google ScholarTM

Check

Altmetric



Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.