Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/30599
Title: STEM study of interfacial reaction at HfxAl1-xOy/Si interfaces
Authors: Dai, JY 
Li, K
Lee, PF
Zhao, X
Redkar, S
Keywords: HfAl1-xOy
High-k gate dielectric
Interfacial structure
STEM
Issue Date: 2004
Publisher: Elsevier
Source: Thin solid films, 2004, v. 462, p. 114-117 How to cite?
Journal: Thin solid films 
Abstract: HfxAl1-xOy thin films were deposited by pulsed-laser deposition (PLD) on p-type (001) Si substrates. Interfacial reaction at HfxAl1-xOy/Si interfaces was studied by scanning transmission electron microscopy (STEM) using high-angle annular dark field imaging technique and the energy dispersive X-ray (EDX) line scan analysis. The results showed that the interfacial reaction is due to Hf diffusion into the Si substrate forming Hf silicide. The presence of Al in the HfxAl1-xOy films was found to be responsible for the Hf silicide formation and it showed that increasing of Al content in the films reduced the interfacial reaction. Therefore, high-quality HfxAl1-xOy films possessing a reaction-ftee interface with Si may be obtained by optimizing the growth condition.
Description: International Conference on Materials for Advanced Technologies, Singapore, Singapore, 7-12 December 2003
URI: http://hdl.handle.net/10397/30599
ISSN: 0040-6090
EISSN: 1879-2731
DOI: 10.1016/j.tsf.2004.05.139
Appears in Collections:Journal/Magazine Article

Access
View full-text via PolyU eLinks SFX Query
Show full item record

SCOPUSTM   
Citations

4
Last Week
0
Last month
0
Citations as of Nov 16, 2017

WEB OF SCIENCETM
Citations

4
Last Week
0
Last month
0
Citations as of Nov 15, 2017

Page view(s)

40
Last Week
2
Last month
Checked on Nov 19, 2017

Google ScholarTM

Check

Altmetric



Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.