Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/30210
Title: Heteroepitaxial growth of ferroelectric YBa2Cu3O7-y/Pb(Zr0.52Ti0.48)O3/YBa2Cu3O7-y thin film capacitor on Si(001) by pulsed laser deposition
Authors: Yip, PW
Wong, KH
Keywords: Ferroelectrics
PLD
Capacitor
Issue Date: 2001
Publisher: Taylor & Francis Inc.
Source: Ferroelectrics, 2001, v. 260, no. 1, p. 225-230 How to cite?
Journal: Ferroelectrics 
Abstract: Ferroelectric YBa2Cu3O7-y/Pb(Zr0.52Ti0.48)O3/YBa2Cu3O7-y thin film capacitors have been fabricated on Si(001) substrates using SrTiO3(STO)/TiN and MgO/TiN as the buffer layers by pulsed laser deposition method. High-resolution scanning electron microscopy studies reveal smooth and crack-free surfaces, and sharp interfaces. Structural characterization by four-circle mode x-ray diffractometry shows excellent epitaxial quality for the whole heterostructure. Resistivity versus temperature measurements by the standard fourprobe technique suggests that good metallic and highly conducting YBCO layers with Tc = 88 K are obtained. Electrical properties such as leakage current, breakdown voltage, P-E loop and polarization switching fatigue of the PZT films are examined in detail. Potential uses of an all-perovskite ferroelectric capacitor in integrated devices are described.
URI: http://hdl.handle.net/10397/30210
ISSN: 0015-0193
EISSN: 1563-5112
DOI: 10.1080/00150190108016021
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