Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/30192
Title: Low-temperature growth and characterization of epitaxial La0.5Sr0.5CoO3/Pb(Zr0.52 Ti0.48)O3/ La0.5Sr0.5 CoO3 capacitors on SrTiO3/TiN buffered Si(001) substrates
Authors: Wu, W
Wong, KH
Mak, CL 
Choy, CL 
Issue Date: 2001
Publisher: Institute of Physics Publishing
Source: Journal of physics. D, Applied physics, 2001, v. 34, no. 11, p. 1587-1591 How to cite?
Journal: Journal of physics. D, Applied physics 
Abstract: We report on the low-temperature growth and characterization of epitaxial all-oxide ferroelectric thin film capacitors, La0.5Sr0.5CoO3/Pb(Zr0.52 Ti0.48)O3/ La0.5Sr0.5 CoO3 on Si(001) substrates by use of SrTiO3/TiN as buffer layers. The capacitor and the buffer layer stack were grown sequentially at 540°C by in situ pulsed laser deposition. Structural characterization using three-axis x-ray diffraction (specular and off-specular θ-2θ scan, ω-scan rocking curve, and φ scan) reveals a parallel growth for all layers. Scanning electron micrographs show that the epitaxial heterostructures have a smooth and crack-free surface. The sharp characteristic optical absorption bands of the SrTiO3 and Pb(Zr0.52Ti0.48)O3 layers also imply good crystallinity in the as-grown films. Resistivity versus temperature measurements show that both the bottom and top oxide electrodes are highly conductive with resistivity at 300 K of 170 and 140 μΩ cm, respectively. Remanent polarization of 19 μC cm-2, coercive field of 45 kV cm-1 and negligible fatigue after 109 cycles at 8 V indicate good electric performance of the integrated capacitor structure.
URI: http://hdl.handle.net/10397/30192
ISSN: 0022-3727
EISSN: 1361-6463
DOI: 10.1088/0022-3727/34/11/305
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