Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/30102
Title: Microwave characterization of BST thin films on LAO interdigital capacitor
Authors: Cheng, YL
Chong, N
Wang, Y 
Liu, JZ
Chan, HLW 
Choy, CL 
Keywords: Dielectric permittivity
Interdigital capacitor
Parasitic
Tunability
Issue Date: 2003
Publisher: Taylor & Francis
Source: Integrated ferroelectrics, 2003, v. 55, p. 939-946 How to cite?
Journal: Integrated ferroelectrics 
Abstract: The dielectric properties of (Ba0.5Sr0.5)TiO 3 (BST) thin films on LaAlO3 (LAO) single crystals were studied over a wide frequency range. The samples with interdigital electrodes were prepared by microelectronic processing. The dielectric characterizations were carried out in the following steps: 1) the standard calibration of the instrument, 2) the removal of parasitic capacitance and the extraction of the capacitance of the interdigital capacitor (IDC) and 3) the extraction of the dielectric permittivity (e) of BST. It was found that e of BST has a constant value (about 400) from 50 MHz to 2 GHz; at higher frequencies, e gradually decreases. The BST interdigital capacitors exhibited good dielectric tunability.
URI: http://hdl.handle.net/10397/30102
ISSN: 1058-4587
EISSN: 1607-8489
DOI: 10.1080/10584580390259407
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