Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/30019
Title: Growth of completely (110)-oriented Pt film on Si (100) by using MgO as a buffer by pulsed laser deposition
Authors: Chen, XY
Yang, B
Zhu, T
Wong, KH
Liu, JM
Liu, ZG
Issue Date: 2002
Publisher: Springer
Source: Applied physics. A, Materials science & processing, 2002, v. 74, no. 4, p. 567-569 How to cite?
Journal: Applied physics. A, Materials science & processing 
Abstract: (110)-textured MgO films were grown on Si (100) with etching and without etching by pulsed laser deposition. The deposited MgO films were shown to be droplets-free. The MgO film was used as a buffer layer to further grow Pt film on Si (100). A completely (110)-oriented Pt film was obtained on such a buffer layer and its surface is very smooth with a roughness of about 7.5 nm over 5 × 5 μm. This can be used as a new oriented Pt electrode on silicon for devices.
URI: http://hdl.handle.net/10397/30019
ISSN: 0947-8396
EISSN: 1432-0630
DOI: 10.1007/s003390100904
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