Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/2975
Title: Heteroepitaxial growth of lead magnesium niobate-lead titanate thin films by pulsed laser deposition method
Authors: Hau, Fei-fei
Keywords: Hong Kong Polytechnic University -- Dissertations
Thin films
Pulsed laser deposition
Issue Date: 2002
Publisher: The Hong Kong Polytechnic University
Abstract: In the present research we have used pulsed laser deposition (PLD) method to prepare super high-k (1-x)[Pb(Mg₁/₃Nb₂/₃)O₃]-x[PbTiO₃] (PMN₁-x-PTx) dielectric thin films for future high-density dynamic random access memory (DRAM) applications. PMN₁-x-PTx, films with x = 0.1 and 0.35 have been grown on various substrates with La₀.₇Sr₀.₃MnO₃ (LSMO) and BaPbO₃ (BPO) conducting oxides as well as Pt bottom electrodes. Conditions for heteroepitaxial growth of PMN-PT films have been identified. Structural and electrical properties of all these films have been carefully evaluated and compared. Integration of PMN-PT super high-k dielectric films with Si has been attempted via Pt and TiN buffer layers. Good structural quality PMN-PT/Pt/Si, PMN-PT/LSMO/Pt/Si and PMN-PT/BPO/Pt/Si heterostructures have been obtained. In addition, heteroepitaxial (001)PMN-PT││(001)LSMO││(001)MgO││(001)TiN││(001)Si has been demonstrated. Our results also reveal that the use of lead based oxide electrode (BPO) has reduced the dielectric leakage current. A maximum room temperature dielectric constant of 1750 at 10 kHz and a minimum leakage current of 6.78x10⁻⁹ A/cm² at 1V have been recorded.
Description: v, 102 leaves : ill. ; 30 cm.
PolyU Library Call No.: [THS] LG51 .H577M AP 2002 Hau
URI: http://hdl.handle.net/10397/2975
Rights: All rights reserved.
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